advance technical information min typ max 600 4.5 5.5 6.5 2.2 2.7 2.8 3.4 1.0 5.0 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) gate threshold voltage (v ce = v ge , i c = 700a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces v ge (th) v ce (on) i ces i ges maximum ratings all ratings: t c = 25c unless otherwise specified. static electrical characteristics unit volts ma na symbol v ces v cgr v ge i c1 i c2 i cm i lm e as p d t j ,t stg t l parameter collector-emitter voltage collector-gate voltage (r ge = 20k w ) gate-emitter voltage continuous collector current 4 @ t c = 25c continuous collector current @ t c = 60c pulsed collector current 1 @ t c = 25c rbsoa clamped inductive load current @ r g = 11 w t c = 125c single pulse avalanche energy 2 total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. APT100GF60JR 600 600 20 100 100 280 200 85 500 -55 to 150 300 unit volts amps mj watts c 052-6261 rev - 5-2001 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com fast igbt g c e the fast igbt is a new generation of high voltage power igbts. using non-punch through technology the fast igbt offers superior ruggedness, fast switching speed and low collector-emitter on voltage. ? low forward voltage drop ? high freq. switching to 20khz ? low tail current ? ultra low leakage current ? avalanche rated ? rbsoa and scsoa rated usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 sot-227 g e e c isotop "ul recognized" APT100GF60JR 600v 100a
advance technical information 052-6261 rev - 5-2001 APT100GF60JR dynamic characteristics characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.66v ces i c = i c2 r g = 10 w inductive switching (150c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 w t j = +150c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 w t j = +25c v ce = 20v, i c = i c2 min typ max 4400 480 300 335 40 195 50 200 190 270 50 170 400 95 6.3 5.2 11.5 55 180 365 90 10.5 6 unit pf nc ns ns mj ns mj s unit c/w oz gm lb?in n?m min typ max 0.32 40 1.03 29.2 10 1.5 characteristic junction to case junction to ambient package weight mounting torque ( using a 6-32 or 3mm binding head machine screw ) symbol r q jc r q ja w t torque thermal and mechanical characteristics symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe 1 repetitive rating: pulse width limited by maximum junction temperature. 2 i c = i c2 , r ge = 25 w , l = 17h, t j = 25c 3 see mil-std-750 method 3471 apt reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60JR 052-6261 rev - 5-2001 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter collector gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter emitter terminals are shorted internally. current handling capability is equal for either source terminal. apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 advance technical information
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